Global Ferroelectric RAM Market Research Report, Size, Share, Trends and Forecast to 2025

 As per the latest report by IMARC Group, titled “Ferroelectric RAM Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2020-2025,The global ferroelectric RAM market grew at a CAGR of around 20% during 2014-2019 and expects the market to continue its strong growth during the next five years.

Ferroelectric Random-Access Memory (FRAM), also known as a FeRAM, is a type of memory that utilizes a ferroelectric film instead of a dielectric layer to achieve non‐volatility. It is similar in construction to dynamic random-access memory (DRAM). The memory cell of FRAM is comprised of a bit line and a capacitor connected to a plate. FRAM offers various advantages, such as faster write performance, high endurance, greater data reliability and more write-erase cycles. 

The primary factor impelling the demand for FRAMs is the various advantages offered by them as compared to their conventional counterparts. FRAM technology is embedded in microcontroller units (MCUs) using CMOS-based chips. This requires fewer stages for incorporating flash memory into MCUs, resulting in significant cost reductions. Besides this, it consumes low power as compared to other alternatives. Apart from this, the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices helps FRAMs in automatic system updates, especially in wireless applications. Moreover, with extensive research and development, manufacturers have designed FRAM-based smart meters to increase their operational life and minimize the overall maintenance costs.

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Note: We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.


Global Ferroelectric RAM Market 2020-2025 Analysis and Segmentation:


Competitive Landscape:

The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.

Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.

The report has segmented the market on the basis on region, type, application and end-use.

Breakup by Type:

· Serial Memory

· Parallel Memory

· Others
 

Breakup by Application:

· Mass Storage

· Embedded Storage

· Others
 

Breakup by End-Use:

· Security Systems

· Energy Meters

· Smart Cards

· Consumer Electronics

· Wearable Electronics

· Automotive Electronics

· Others
 

Breakup by Region:

· North America

· Asia Pacific

· Europe

· Latin America

· Middle East and Africa

Explore Full Report with TOC & List of Figure: https://www.imarcgroup.com/ferroelectric-ram-market

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